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Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp. Customer Support Dept. April 1, 2003
Cautions
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2SK2085
Silicon N-Channel MOS FET
ADE-208-1343 (Z) 1st. Edition Mar. 2001 Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter
Outline
TO-92 Mod
D G
32
1 1. Source 2. Drain 3. Gate
S
2SK2085
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 100 20 1.0 4.0 1.0 0.9 150 -55 to +150
Unit V V A A A W C C
2SK2085
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 100 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.7 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.6 0.75 1.2 130 50 12 7 6.5 55 20 0.85 80 Max -- -- 10 100 2.0 0.9 1.35 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns I F = 1.0 A, VGS = 0 I F = 1.0 A, VGS = 0, diF / dt = 50 A / s Unit V V A A V Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 80 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 0.5 A VGS = 10 V*1 I D = 0.5 A VGS = 4 V*1 I D = 0.5 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 0.5 A VGS = 10 V RL = 60
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on)
2SK2085
Power vs. Temperature Derating 1.6 Pch (W) I D (A)
10 3 1 0.3 0.1 0.03 0.01 0.003
10
10 s s
Maximum Safe Operation Area
1.2
PW
Channel Dissipation
Drain Current
0.8
DC Operation in Op this area is er limited by R DS(on) a
m s = 1 (1 0 m sh s ot )
1
0
tio
n
0.4
Ta = 25C
0.3 1 3 10 30 100 200
0
50
100
150 Ta (C)
200
0.001 0.1
Ambient Temperature
Drain to Source Voltage
V DS (V)
Typical Output Characteristics 5
6V
Typical Transfer Characteristics 5 V DS = 10 V Pulse Test
Pulse Test 4V (A) 3.5 V ID Drain Current 3V 2.5 V VGS = 2 V
I D (A)
4
8V 10 V
5V
4
3
Drain Current
3
2
2 -25 C Tc = 25 C 75 C
1
1
0
2 4 6 Drain to Source Voltage
8 V DS (V)
10
0
1 2 3 Gate to Source Voltage
4 5 V GS (V)
2SK2085
Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( ) 1.0 Static Drain to Source State Resistance vs. Drain Current 2 Pulse Test 1 V GS = 4 V 10 V
0.8 1A 0.6
0.5
0.4
0.5 A I D = 0.2 A
0.2
0.2
0
2 4 6 Gate to Source Voltage
8 V GS (V)
10
0.1 0.1
0.2
0.5 1 2 Drain Current I D (A)
5
Static Drain to Source on State Resistance R DS(on) ( )
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 2.0 Pulse Test 1.6 0.2 A 0.5 A ID=1A V GS = 4 V 1A 0.5 A 0.2 A 10 V
Forward Transfer Admittance vs. Drain Current 10 5 Tc = -25 C 25 C 75 C
2 1 0.5
1.2
0.8
0.4 0 -40
0.2 0.1 0.05 0.1
V DS = 10 V Pulse Test 0.2 0.5 1 2 5
0 40 80 120 160 Case Temperature Tc (C)
Drain Current I D (A)
2SK2085
Body to Drain Diode Reverse Recovery Time 200 Reverse Recovery Time trr (ns) Capacitance C (pF) di / dt = 50 A / s V GS = 0, Ta = 25 C 100 Typical Capacitance vs. Drain to Source Voltage 1000
Ciss 100 Coss
50
10
Crss VGS = 0 f = 1 MHz 0 10 20 30 40 50
20 1 0.05 0.1 0.2 0.5 1 2 Reverse Drain Current I DR (A)
10 0.02
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics V DS (V) V GS (V) 200 20
200 100 Switching Time t (ns) 50 20 10 5 2 0.02
Switching Characteristics
160 V DD = 25 V 50 V 80 V VDS VGS
I D= 1 A
16
t d(off) V GS = 10 V V DD = 30 V PW = 2 s duty < 1 % tf
Drain to Source Voltage
120
12
80
8
Gate to Source Voltage
t d(on) tr
40
V DD = 25 V 50 V 80 V 2 8 6 8 Gate Charge Qg (nc)
4 0 10
0
0.05 0.1 0.2 Drain Current
0.5 1 I D (A)
2
2SK2085
Reverse Drain Current vs. Source to Drain Voltage 5 Reverse Drain Current I DR (A) Pulse Test 4
3
2 10 V
V GS = 0, -5 V
1
5V 0.4 0.8 1.2 1.6 2.0
0
Source to Drain Voltage
V SD (V)
Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor
Waveform
90%
10% 90% td(off) tf
90% td(on) tr
2SK2085
Package Dimensions As of January, 2001
Unit: mm
4.8 0.4 3.8 0.4
0.65 0.1 0.75 Max 0.55Max 0.7 0.60 Max
2.3 Max
10.1 Min
8.0 0.5
0.5Max
1.27 2.54
Hitachi Code JEDEC EIAJ Mass (reference value) TO-92 Mod -- Conforms 0.35 g
2SK2085
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica Europe Asia Japan
: : : :
http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk
For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
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